| Part Number | TEC9016 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon NPN Transistor |
| Description | TEC9016 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HGIH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, MIX, IF AMPLIFIER APPLICATIONS. FEATURES . Small... |
| Features |
. Small Collector Output Capacitance : C b=1.2pF(Typ.) . Low Noise Figure : NF=2. 5dB(Typ. ) (f=l 00MHz)
Unit in mm
5.1 MAX.
"
(14 5 0.55 MAX.
VJ 1
0.45 . u
r in
5<
CO
!^
F-
CO
s
cS
L
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
RATING
UNIT
1.27 ,
1-27
Collector-Base Voltage C... |
| Datasheet | TEC9016 pdf datasheet - 216.47KB |
| Part Number | TEC9015 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | TEC9015 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATKDNS. DRIVER STAGE AMPLIFIER APPLICATIONS. FE. |
| Features |
5.1 MAX.
Unit. in mm
. High Voltage and High Current : VcEO=-50V(Min.), I c =-1 50mA (Max.
. Low Noise : NF=0. 7dB(Typ . ) at f=lkHz . Complementary to TEC9014
0.45 .
1
ji
1 0.55 MAX. r
0.45
X
i
^
• 03 a 1 II MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage Co. |
| Datasheet | TEC9015 pdf datasheet |
| Part Number | TEC9014 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9014 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIE R APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. F. |
| Features |
. High Voltage and High Current
: VcEO=50V(Min.), Ic=150mA(Max. . Low Noise : NF=0. 9dB(Typ. ) at f=lkHz . Complementary to TEC9015
Unit in mm
51 MAX.
,
r^
0.45 |||
0.55 MAX. . a45
I 1 Pi
X
ao
5
CD cs
L
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emi. |
| Datasheet | TEC9014 pdf datasheet |
| Part Number | TEC9013 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC9013 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High hpE = hFE=96-300 . 1 Watts Amplifier Applic. |
| Features |
. High hpE = hFE=96-300
. 1 Watts Amplifier Applications . Complementary to TEC9012
Unit in mm
5.1 MAX
r^
-i
i
< s CO
r-H
0,45 j|l
j
0.55 MAX.
s
||
|
"i
oo
5
0.45
1
1
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle. |
| Datasheet | TEC9013 pdf datasheet |
| Part Number | TEC9012 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC9012 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : hFE=96 - 300 . 1W Output Application. |
| Features |
. High h FE : hFE=96 - 300 . 1W Output Applications . Complementary to TEC9013
5.1 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage. |
| Datasheet | TEC9012 pdf datasheet |
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