Part Number | TEC8012 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Title | Silicon PNP Transistor |
Description | SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC8012 DRIVER STAGE AMPLIFIER APPLICA TIONS. Unit in mm SWITCHING APPLICATIONS. FEATURES . Excellent... |
Features |
. Excellent hFE Linearity
: hFE(2)=23(Min.) at VCE =-lV, I C =- 400mA . 1 Watt Amplifier Application . Complementary to TEC8013
51 MAX.
:
-\
'
it CL45
j
1
Q55MAX.
,|
Q45
'
< S
00
M
1
30
S
C5
r-i
MAXIMUM RATINGS (Ta=25°C)
1
.
CHARACTERISTIC Collector-Base Voltage Collector-Emitter V... |
Datasheet | TEC8012 pdf datasheet - 76.05KB |
Part Number | TEC8013 |
Manufacturer | Toshiba |
Title | Silicon NPN Transistor |
Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TEC8013 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHIN. |
Features |
. Excellent hpg Linearity
: h FE (2)=23(Min.) at VcE=lV, I c =400mA . 1 Watt Amplifier Applications . Complementary to TEC8012
Unit in mm
5.1 MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
1.27
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu. |
Datasheet | TEC8013 pdf datasheet |
Since 2024. D4U Semiconductor. | Contact Us | Privacy Policy