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TDG650E60 |
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| Part Number | TDG650E60 |
| Manufacturer | Teledyne |
| Description | Teledyne’s TDG650E60 is an enhancement mode GaN- on-silicon power transistor based on GaN Systems Technology. The properties of GaN ensure high current, high voltage breakdown combined with very high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current performance and excellent thermal characteristics.. |
| Features |
• 650 V enhancement mode power switch with P-GaN gate structure • Bottom- or Top-side cooled configuration • RDS(on) = 25 mΩ (typ) • IDS(max) = 60 A • Ultra-low FOM Island Technology® die • Ultra-low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) with 7V tolerance • Transient tolerant gate drive (-20 / +10 V) 1μs • Very high switching frequency (> 10 MHz) • Reverse current capability • Zero reverse recovery loss • Small 11 x 9 mm2 PCB footprint • Source Sense (SS) pads for optimized gate drive • Dual gate and source sense pads for optimal board layout • RoHS compliant • . |
| Datasheet |
 TDG650E60 Data Sheet
PDF 2.66MB |
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