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SiHLZ24L Power MOSFET Datasheet


SiHLZ24L

Vishay
SiHLZ24L
Part Number SiHLZ24L
Manufacturer Vishay (https://www.vishay.com/)
Title Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 68A; 60W; I2PAK,TO262
Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power ca...
Features
• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating
• Logic-level gate drive Available
• RDS (on) specified at VGS = 4 V and 5 V
• 175°C operating temperature Available
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details DESCRIPTION Third generation po...

Document Datasheet SiHLZ24L datasheet pdf (425.27KB)
Distributor Distributor
TME
All other distributors
Stock 0 In Stock
Price
500 units: 0.69 USD
100 units: 0.73 USD
25 units: 0.82 USD
5 units: 0.92 USD
1 units: 1.02 USD
BuyNow (No Longer Stocked Vishay Intertechnologies SIHLZ24L-GE3)



Vishay
SiHLZ24S
Part Number SiHLZ24S
Manufacturer Vishay
Title Power MOSFET
Description Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resi.
Features
• Surface-mount
• Available in tape and reel
• Dynamic dv/dt rating
• Logic-level gate drive Available
• RDS (on) specified at VGS = 4 V and 5 V
• 175°C operating temperature Available
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?999.

Document SiHLZ24S datasheet pdf


Vishay
SiHLZ24
Part Number SiHLZ24
Manufacturer Vishay
Title Power MOSFET
Description Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-res.
Features
• Dynamic dV/dt Rating
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs f.

Document SiHLZ24 datasheet pdf



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