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SiHA11N80E Power MOSFET

SiHA11N80E

SiHA11N80E
SiHA11N80E SiHA11N80E
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Part Number SiHA11N80E
Manufacturer Vishay (https://www.vishay.com/)
Description www.vishay.com SiHA11N80E Vishay Siliconix E Series Power MOSFET D Thin-Lead TO-220 FULLPAK G G DS S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 88 0.38 9 16 Single FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced.
Features
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING I.
Datasheet Datasheet SiHA11N80E Data Sheet
PDF 141.15KB
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SiHA11N80E

INCHANGE
SiHA11N80E
Part Number SiHA11N80E
Manufacturer INCHANGE
Title N-Channel MOSFET
Description Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switchi.
Features
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications INCHANGE Semiconductor SiHA11N80E
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 8.


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