SVGQ046R8NLPD |
Part Number | SVGQ046R8NLPD |
Manufacturer | Silan Microelectronics |
Description | SVGQ046R8NLPD is dual N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power managemen. |
Features | AEC-Q101 qualified 63A, 40V, RDS(on)(typ.)=5.6m@VGS=10V Low gate charge Low Crss Fast switching Extreme dv/dt rated 100% avalanche tested Pb-free lead plating RoHS compliant Max. junction temperature: Tjmax.=175 ºC KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.4~3.4 6.8 63 18 Unit V V m A nC 123 4 MO-4A-235-1.27 ORDERING INFORMATION Part No. SVGQ046R8NLPDTR Package MO-4A-235-1.27 Marking Q046R8NLP Hazardous Substance Control Halogen free Packing Type Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.sil. |
Datasheet |
SVGQ046R8NLPD Data Sheet
PDF 436.25KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | SVG-2066 |
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2 | SVG-2066Z |
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3 | SVG062R8NL5 |
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4 | SVG104R5NS |
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5 | SVG104R5NT |
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6 | SVG15670NL5 |
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7 | SVGP03100NCS |
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8 | SV-3SS |
Sanken |
Symmetry Type Silicon Varistor | |
9 | SV-4SS |
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Silicon Varistors | |
10 | SV-SD400V |
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(SV-SD400V / SV-SD800N) |