Part Number | SVF20N50F |
Manufacturer | SILAN MICROELECTRONICS |
Description | SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s... |
Features |
∗ 20A, 500V, RDS(on(typ)=0.20Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF20N50F SVF20N50PN
Package TO-220F-3L
TO-3PN
Marking SVF20N50F
20N50
Material Pb free Pb free
Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.04.17 Page 1 of 8
SVF20N50F/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC... |
Document |
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Part Number | SVF20N50PN |
Manufacturer | SILAN MICROELECTRONICS |
Title | 20A 500V N-CHANNEL MOSFET |
Description | SVF20N50F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS. |
Features |
∗ 20A, 500V, RDS(on(typ)=0.20Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF20N50F SVF20N50PN
Package TO-220F-3L
TO-3PN
Marking SVF20N50F
20N50
Material Pb free Pb free
Packing Tube Tube
HANGZHOU SILAN MICROELE. |
Document | SVF20N50PN datasheet pdf |
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