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SVD9Z24NT |
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| Part Number | SVD9Z24NT |
| Manufacturer | Silan Microelectronics |
| Description | SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is wid. |
| Features | -12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V P channel Low gate charge Low Crss Fast switching Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVD9Z24NT Package TO-220-3L Marking SVD9Z24N Harzardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature. |
| Datasheet |
 SVD9Z24NT Data Sheet
PDF 242.92KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SVD9N65F |
Silan Microelectronics |
650V N-CHANNEL MOSFET |
|
| 2 | SVD9N65T |
Silan Microelectronics |
650V N-CHANNEL MOSFET |
|
| 3 | SVD101 |
Sanyo Semicon Device |
X Band VCO / PLO |
|
| 4 | SVD102 |
Sanyo Semicon Device |
X Band VCO / PLO |
|
| 5 | SVD1055SA |
Silan Microelectronics |
55V N/P-CHANNEL MOSFET |
|
| 6 | SVD10N60F |
Silan Microelectronics |
600V N-CHANNEL MOSFET |
|
| 7 | SVD10N60T |
Silan Microelectronics |
600V N-CHANNEL MOSFET |
|
| 8 | SVD10N65F |
Silan Microelectronics |
650V N-CHANNEL MOSFET |
|
| 9 | SVD10N65FG |
Silan Microelectronics |
650V N-CHANNEL MOSFET |
|
| 10 | SVD10N65T |
Silan Microelectronics |
650V N-CHANNEL MOSFET |
|
Desde 2024. D4U Semiconductor.
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