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STT6405 P-Channel MOSFET

STT6405

STT6405
STT6405 STT6405
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Part Number STT6405
Manufacturer SeCoS
Description The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES z z z N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70.
Features z z z N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 Max 0 0.10 0.70 1.00 0.12 Ref 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 Ref 0.60 Ref 0° 10° 0.30 0.50 0.95 Ref 1.90 Ref ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Tj, Tstg Symbol Ratings -30.
Datasheet Datasheet STT6405 Data Sheet
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STT6405

VBsemi
STT6405
Part Number STT6405
Manufacturer VBsemi
Title P-Channel MOSFET
Description STT6405-VB STT6405-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.049 at VGS = - 10 V - 30 0.054 at VGS = - 4.5 V ID (A)a - 4.8 - 4.1 Qg (Typ.) 5.1 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLI.
Features
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET APPLICATIONS
• Load Switch 3 mm TSOP-6 Top V iew 1 6 2 5 3 4 2.85 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C T.


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