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| Part Number | STP25N10F7 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | STP25N10F7 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain. |
| Features |
·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·These devices utilize the 7th generation of design rules of ST Proprietary,with a new gate structure. ·Low Drain-Source On-Resistance APPLICATIONS. |
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Desde 2024. D4U Semiconductor.
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