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| Part Number | ST26025A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | ST26025A |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·High DC Current Gain- : hFE= 750(Min.)@IC= -10A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as . |
| Features | ：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification ST26025A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A VBE(sat) Base-. |
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