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SST8810J-C Dual N-Ch Enhancement Mode Power MOSFET

SST8810J-C

SST8810J-C
SST8810J-C SST8810J-C
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Part Number SST8810J-C
Manufacturer SeCoS
Description SST8810J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. SOT-26 MARKING L8810   = Production Line Indication PACKAGE INFORMATION Package MPQ SOT-26 3K Le.
Features tinuous Drain Current Pulsed Drain Current 1 Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Junction and Storage Temperature Range ID IDM TL TJ, TSTG Thermal Data Thermal Resistance from Junction-Ambient RθJA Note: 1. Repetitive rating: pulse width is limited by the junction temperature. Rating 20 ±12 7 30 260 150, -55~150 83.3
*Dimensions in millimeters Unit V V A A °C °C/W http://www.SeCoSGmbH.com/ 29-Jun-2022 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SST8810J-C 7A, 20V, RDS(ON) 20m Dual N-Ch En.
Datasheet Datasheet SST8810J-C Data Sheet
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