SST8810J-C |
Part Number | SST8810J-C |
Manufacturer | SeCoS |
Description | SST8810J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. SOT-26 MARKING L8810 = Production Line Indication PACKAGE INFORMATION Package MPQ SOT-26 3K Le. |
Features |
tinuous Drain Current
Pulsed Drain Current 1 Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Junction and Storage Temperature Range
ID IDM TL TJ, TSTG
Thermal Data
Thermal Resistance from Junction-Ambient
RθJA
Note: 1. Repetitive rating: pulse width is limited by the junction temperature.
Rating 20 ±12 7 30 260
150, -55~150
83.3
*Dimensions in millimeters Unit V V A A °C °C/W http://www.SeCoSGmbH.com/ 29-Jun-2022 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SST8810J-C 7A, 20V, RDS(ON) 20m Dual N-Ch En. |
Datasheet |
SST8810J-C Data Sheet
PDF 607.37KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SST8810J |
SeCoS |
N-channel MOSFET | |
2 | SST8205S |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SST85LD0128 |
SST |
NANDrive | |
4 | SST85LD0256 |
Silicon Storage Technology |
NANDrive | |
5 | SST85LD0512 |
Silicon Storage Technology |
NANDrive | |
6 | SST85LD1004T |
SST |
4 GByte NANDrive | |
7 | SST89C54 |
Silicon Storage Technology |
(SST89C54 / SST89C58 / SST89C59) 8-Bit MICROCONTROLLER | |
8 | SST89C58 |
Silicon Storage Technology |
(SST89C54 / SST89C58 / SST89C59) 8-Bit MICROCONTROLLER | |
9 | SST89C59 |
Silicon Storage Technology |
(SST89C54 / SST89C58 / SST89C59) 8-Bit MICROCONTROLLER | |
10 | SST89E51 |
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