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SST2019L-C |
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| Part Number | SST2019L-C |
| Manufacturer | SeCoS |
| Description | The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST2019L-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L B FEATURES Advanced High Cell Density Tre. |
| Features | Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING L2019 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 - 1.30 1.90 REF. 0.25 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ORDER INFORMATION Part Number Type SST2019L-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Sour. |
| Datasheet |
 SST2019L-C Data Sheet
PDF 195.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SST201 |
Vishay |
N-Channel JFETs |
|
| 2 | SST201 |
Micross |
Amplifier |
|
| 3 | SST2007-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | SST202 |
Vishay |
N-Channel JFETs |
|
| 5 | SST202 |
Micross |
Amplifier |
|
| 6 | SST204 |
Vishay |
N-Channel JFETs |
|
| 7 | SST204 |
Micross |
Amplifier |
|
| 8 | SST2100 |
Siliconix |
N-Channel Depletion-Mode Lateral DMOS FETs |
|
| 9 | SST211 |
Siliconix |
N-Channel Lateral DMOS FETs |
|
| 10 | SST211 |
TEMIC |
N-Channel Lateral DMOS FETs |
|
Desde 2024. D4U Semiconductor.
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