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SSQF02N60J |
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| Part Number | SSQF02N60J |
| Manufacturer | SeCoS |
| Description | The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed . |
| Features | Robust high voltage termination Specified avalanche energy Source-to-drain diode recovery time comparable to a discrete fast recovery diode Diode is characterized for the use in bridge circuits IDSS and VDS(ON) are specified at the elevated temperature REF. A B C D E F G Millimeter Min. Max. 14.80 15.20 9.96 10.36 13.20 REF. 4.30 4.70 2.80 3.20 2.50 2.90 0.50 0.75 REF. H J K L M N 2 Drain Millimeter Min. Max. 3.60 4.00 1.30 REF. 0.50 0.75 2.54 REF. 2.70 REF. φ 3.5 REF. 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gat. |
| Datasheet |
 SSQF02N60J Data Sheet
PDF 248.32KB |
| Distributor | Stock | Price | Buy |
|---|
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Desde 2024. D4U Semiconductor.
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