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SSM0410S |
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| Part Number | SSM0410S |
| Manufacturer | SeCoS Halbleitertechnologie |
| Description | The SSM0410S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. K A M SOT-223 4 Top View CB 1 2 3 L E D . |
| Features |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic F G H J MARKING 0410S REF. A B C D E F = Date code Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 PACKAGE INFORMATION Package SOT-223 MPQ 2.5K Leader Size 13 inch G D S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V Pulsed Drain Current Power Dissipation 3 2 Symbol VDS VGS TA=25. |
| Datasheet |
 SSM0410S Data Sheet
PDF 399.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM0410-C |
SeCoS |
N-Channel MOSFET |
|
| 2 | SSM04N70BGF-A |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 3 | SSM04N70BGF-H |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 4 | SSM04N70BGP-A |
Silicon Standard |
N-channel Enhancement-mode Power MOSFET |
|
| 5 | SSM04N70BP |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | SSM04N70BR |
Silicon Standard |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | SSM01N60J |
Silicon Standard |
(SSM01N60H) N Channel Enhancement-Mode Power MOSFET |
|
| 8 | SSM01N60P |
Silicon Standard |
N Channel Enhancement Mode Power MOSFET |
|
| 9 | SSM02N60P |
ETC |
N CHANNEL ENHANCEMENT MODE |
|
| 10 | SSM0311-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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