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SSI20N5E-C |
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| Part Number | SSI20N5E-C |
| Manufacturer | SeCoS |
| Description | The SSI20N5E-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSI20N5E-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology. |
| Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 20N5E PACKAGE INFORMATION Package MPQ SOT-563 3K Leader Size 7 inch SOT-563 REF. A B C D E Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.60 1.10 1.30 - 0.05 REF. F G H J K Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 0.20 0.40 Mounting Pad Layout ORDER INFORMATION Part Number Type SSI20N5E-C Lead (Pb)-free and Halogen-free *Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=. |
| Datasheet |
 SSI20N5E-C Data Sheet
PDF 471.17KB |
| Distributor | Stock | Price | Buy |
|---|
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Desde 2024. D4U Semiconductor.
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