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SSG9960 |
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| Part Number | SSG9960 |
| Manufacturer | SeCoS |
| Description | 0.40 0.90 0.19 0.25 The SSG9960 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 Features * Low on-resistance * Fast switching speed D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensio. |
| Features |
* Low on-resistance * Fast switching speed D1 8 D1 7 D2 6 D2 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 D2 Date Code 9960SS G1 1 S1 2 G1 3 S2 4 G2 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 40 ±20 7.8 6.2 20 2 0.016 Unit V V A A A W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal . |
| Datasheet |
 SSG9960 Data Sheet
PDF 323.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSG9962 |
SeCoS |
N-channel MOSFET |
|
| 2 | SSG9922E |
SeCoS |
N-channel MOSFET |
|
| 3 | SSG9926J-C |
SeCoS |
Dual N-Channel Enhancement Mode Power MOSFET |
|
| 4 | SSG9926N |
SeCoS Halbleitertechnologie |
N-Channel MOSFET |
|
| 5 | SSG9971 |
SeCoS |
N-channel MOSFET |
|
| 6 | SSG9971A |
SeCoS |
Dual-N Enhancement Mode Power MOSFET |
|
| 7 | SSG9971A-C |
SeCoS |
Dual-N Enhancement Mode Power MOSFET |
|
| 8 | SSG9973 |
SeCoS |
N-channel MOSFET |
|
| 9 | SSG9975 |
SeCoS |
N-channel MOSFET |
|
| 10 | SSG9410 |
SeCoS |
N-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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