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SSG5N06-C |
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| Part Number | SSG5N06-C |
| Manufacturer | SeCoS |
| Description | The SSG5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSG5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super. |
| Features |
Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 5N06 = Date code PACKAGE INFORMATION Package MPQ SOP-8 2.5K Leader Size 13 inch SOP-8 B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.79 6.20 4.70 5.11 3.80 4.00 0° 8° 0.40 1.27 0.10 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.33 0.51 0.375 REF. 45°REF. 1.3 1.752 0 0.25 0.25 REF. Mounting Pad Layout ORDER INFORMATION Part Number Type SSG5N06-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating. |
| Datasheet |
 SSG5N06-C Data Sheet
PDF 683.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSG5N20CD |
South Sea Semiconductor |
Dual N-Channel Enhancement Mode MOSFET |
|
| 2 | SSG50N60 |
SSDI |
ultrafast IGBT |
|
| 3 | SSG5509A |
SeCoS |
N & P-Ch Enhancement Mode Power MOSFET |
|
| 4 | SSG55N60M |
SSDI |
ultrafast IGBT |
|
| 5 | SSG55N60N |
SSDI |
ultrafast IGBT |
|
| 6 | SSG55N60P |
SSDI |
ultrafast IGBT |
|
| 7 | SSG55N60Z |
SSDI |
ultrafast IGBT |
|
| 8 | SSG0410 |
SeCoS |
N-Channel MOSFET |
|
| 9 | SSG04N15B-C |
SeCoS |
N-Channel MOSFET |
|
| 10 | SSG05P03-C |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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