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SSG4801 |
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| Part Number | SSG4801 |
| Manufacturer | SeCoS |
| Description | The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. SOP-8 B L D M FEATURES A C N J K Simple Dri. |
| Features |
A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S1 D1 G1 D1 D2 D2 S2 G2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Total Power Diss. |
| Datasheet |
 SSG4801 Data Sheet
PDF 1.00MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSG4800J-C |
SeCoS |
Dual-N Enhancement Mode Power MOSFET |
|
| 2 | SSG4825P |
SeCoS |
P-Channel Mode Power MOSFET |
|
| 3 | SSG4825PE |
SeCoS |
P-Channel Mode Power MOSFET |
|
| 4 | SSG4835P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 5 | SSG4835PR-C |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 6 | SSG4841P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET |
|
| 7 | SSG4842N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 8 | SSG4874N |
SeCoS |
N-Channel Mode Power MOSFET |
|
| 9 | SSG4890N |
SeCoS |
Dual-N Enhancement Mode Power MOSFET |
|
| 10 | SSG4224 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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