SSG4403 |
Part Number | SSG4403 |
Manufacturer | SeCoS |
Description | The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. FEATURES Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS DD D D 8765 4403SC = Date Code Gate 123 4 SS. |
Features | Low Gate Charge Lower On-resistance Fast Switching Characteristic PACKAGE DIMENSIONS DD D D 8765 4403SC = Date Code Gate 123 4 SS SG ABSOLUTE MAXIMUM RATINGS Drain Source B LD M A H G C N JK FE REF. A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation VGS ID @Ta=25℃ I. |
Datasheet |
SSG4403 Data Sheet
PDF 959.46KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSG4401P |
SeCoS |
P-Ch Enhancement Mode Power MOSFET | |
2 | SSG4402N |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SSG4406F-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SSG4407 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
5 | SSG4407J-C |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
6 | SSG4407PE |
SeCoS |
P-Channel Mode Power MOSFET | |
7 | SSG4410 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
8 | SSG4410N-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
9 | SSG4423 |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
10 | SSG4424 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |