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SSD65N10S-C |
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| Part Number | SSD65N10S-C |
| Manufacturer | SeCoS |
| Description | SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. SSD65N10S-C meets the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low . |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 65N10S Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type SSD65N10S-C Lead (Pb)-free and Halogen-free ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 1 @VGS=10V Pulsed Drain Current 2 TC=25°C ID TC=100°C IDM Power Dissipation TC=25°C PD Operating Junction & Storage Temperature Thermal Resistance Junction-Ambient. |
| Datasheet |
 SSD65N10S-C Data Sheet
PDF 731.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD60N04-12D |
SeCoS |
N-Channel MOSFET |
|
| 2 | SSD61N60SG |
SeCoS |
N-Channel MOSFET |
|
| 3 | SSD-C01G-3xx |
SiliconSystems |
CF RoHS |
|
| 4 | SSD-C01G-5xx |
SiliconSystems |
CF RoHS |
|
| 5 | SSD-C01G-6xx |
SiliconSystems |
CF RoHS |
|
| 6 | SSD-C02G-3xx |
SiliconSystems |
CF RoHS |
|
| 7 | SSD-C02G-5xx |
SiliconSystems |
CF RoHS |
|
| 8 | SSD-C02G-6xx |
SiliconSystems |
CF RoHS |
|
| 9 | SSD-C04G-3xx |
SiliconSystems |
CF RoHS |
|
| 10 | SSD-C04G-5xx |
SiliconSystems |
CF RoHS |
|
Desde 2024. D4U Semiconductor.
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