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SSD06N70SL |
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| Part Number | SSD06N70SL |
| Manufacturer | SeCoS |
| Description | The SSD06N70SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252 FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available. |
| Features | Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available 1 Gate 2 Drain 3 Source A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.30 REF. B 4.95 5.50 K 0.64 1.14 C 2.10 2.50 M 0.50 0.95 D 0.43 0.9 N 1.3 1.8 E 6.0 7.5 O 0 0.13 F 2.80 REF P 0.58REF. G 5.40 6.40 H 0.60 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=. |
| Datasheet |
 SSD06N70SL Data Sheet
PDF 505.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSD01L60 |
SeCoS |
N-Channel Enhancement Mode Power MosFET |
|
| 2 | SSD02N60J-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SSD02N60SL |
SeCoS |
N-Channel MOSFET |
|
| 4 | SSD04N60J |
SeCoS |
N-Channel MOSFET |
|
| 5 | SSD0817 |
ETC |
LCD Segment / Common Driver |
|
| 6 | SSD0859 |
Solomon Systech |
128 x 80 STN LCD Segment / Common 4 G/S Drive |
|
| 7 | SSD09N65H-C |
SeCoS |
N-Channel Super Junction Power MOSFET |
|
| 8 | SSD-C01G-3xx |
SiliconSystems |
CF RoHS |
|
| 9 | SSD-C01G-5xx |
SiliconSystems |
CF RoHS |
|
| 10 | SSD-C01G-6xx |
SiliconSystems |
CF RoHS |
|
Desde 2024. D4U Semiconductor.
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