Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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SS8550 |
| Part Number | SS8550 |
| Manufacturer | Fairchild |
| Title | PNP Transistor |
| Description | SS8550 — PNP Epitaxial Silicon Transistor November 2014 SS8550 PNP Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information. |
| Features |
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8050 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8550BBU SS8550CBU SS8550CTA SS8550DBU SS8550DTA Top Mark S8550 S8550 S8550 S8550 S8550 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute. |
SS8550 |
| Part Number | SS8550 |
| Manufacturer | Weitron Technology |
| Title | PNP Transistor |
| Description | www.DataSheet4U.com SS8550 Plastic-Encapsulate Transistors PNP Silicon 2 BASE 1 EMITTER COLLECTOR 3 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissi. |
| Features | www.DataSheet4U.com SS8550 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) hFE(1) hFE(2) VCE(sat) VBE(sat) fT 85 40 100 - 400 -0.5 Vdc DC Current Gain (IC= -800 mAdc, VCE= -1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) Base-Emitt. |
SS8550 |
| Part Number | SS8550 |
| Manufacturer | TGS |
| Title | PNP Transistor |
| Description | TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V . |
| Features | Power dissipation PC : 1 W (Ta=25 ℃) MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (. |
SS8550 |
| Part Number | SS8550 |
| Manufacturer | Jin Yu Semiconductor |
| Title | PNP Transistor |
| Description | SS8 550 TRANSISTOR(PNP) FEATURES High Collector Current Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 . |
| Features |
High Collector Current Complementary to SS8050 SOT –23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 417 Tj Junction Temperature Tstg Storage Temper. |
SS8550 |
| Part Number | SS8550 |
| Manufacturer | ON Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | TO−92 3 4.825X4.76 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COP. |
| Features |
• 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8050 • Collector Current: IC = 1.5 A • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO −40 V Collector−Emitter Voltage VCEO −25 V Emitter−Base Voltage . |
SS8550 |
| Part Number | SS8550 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente SS8550 PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage j. |
| Features | z Power dissipation PCM : 0.3 W 1 Base z Collector Current ICM : - 1.5 A z Collector-base voltage V(BR)CBO : - 40 V z Operating & storage junction temperature TJ, TSTG : - 55°C ~ + 150°C Collector 3 2 Emitter 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS D K J C H SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SS8550LT1 |
Tuofeng Semiconductor |
PNP Transistor |
|
| 2 | SS8550LT1 |
Elite |
PNP Transistor |
|
| 3 | SS8550LT1 |
Weitron Technology |
PNP Transistor |
|
| 4 | SS8550T |
SeCoS |
PNP Transistor |
|
| 5 | SS8550W |
SeCoS |
PNP Transistor |
|
| 6 | SS8550W |
GME |
PNP Transistor |
|
| 7 | SS8050 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 8 | SS8050 |
ON Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 9 | SS8050 |
Weitron Technology |
NPN Transistor |
|
| 10 | SS8050 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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