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SRF20100 Schottky Barrier Rectifiers


SRF20100
Part Number SRF20100
Distributor Stock Price Buy
Taiwan Semiconductor
SRF20100
Part Number SRF20100
Manufacturer Taiwan Semiconductor
Title Dual Common Cathode Schottky Rectifier
Description SRF2020 thru SRF20150 Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordanc.
Features - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packin.
JINAN JINGHENG
SRF20100
Part Number SRF20100
Manufacturer JINAN JINGHENG
Title SCHOTTKY BARRIER RECTIFIER
Description R SEMICONDUCTOR SRF2020 THRU SRF20200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 20Amperes FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for o.
Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,Low forward voltage drop High surge capability For use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications JF SRF2060 Dual r.
Mospec Semiconductor
SRF20100
Part Number SRF20100
Manufacturer Mospec Semiconductor
Title (SRF2070 - SRF20100) Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers
Description www.DataSheet4U.com MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low vo.
Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125¢J Operating Junction Temperature *.

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