SPR35N10S-C Datasheet. existencias, precio

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SPR35N10S-C N-Channel Enhancement Mode Power MOSFET

SPR35N10S-C

SPR35N10S-C
SPR35N10S-C SPR35N10S-C
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Part Number SPR35N10S-C
Manufacturer SeCoS
Description The SPR35N10S-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SPR35N10S-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Lower Gate Charge Advanced high cell density Trenc.
Features Lower Gate Charge Advanced high cell density Trench technology Green Device Available MARKING PR-8PP 35N10S = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch ORDER INFORMATION Part Number Type SPR35N10S-C Lead (Pb)-free and Halogen-free REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source V.
Datasheet Datasheet SPR35N10S-C Data Sheet
PDF 455.09KB
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