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| Part Number | SPB80P06P |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SPB80P06P |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. . |
| Features |
·Static drain-source on-resistance: RDS(on)≤23mΩ(@VGS= -10V; ID= -64A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current. |
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