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SMS006N02J7 |
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| Part Number | SMS006N02J7 |
| Manufacturer | Silikron |
| Description | It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C . |
| Features |
Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature SMS006N02J7 Pin Assignments Schematic Diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other appl. |
| Datasheet |
 SMS006N02J7 Data Sheet
PDF 359.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SMS006N01T1 |
Silikron |
MOSFET |
|
| 2 | SMS006N05J7 |
Silikron |
MOSFET |
|
| 3 | SMS006N05J8 |
Silikron |
MOSFET |
|
| 4 | SMS006N09C1 |
Silikron |
MOSFET |
|
| 5 | SMS004N03A1 |
Silikron |
MOSFET |
|
| 6 | SMS004N03D1 |
Silikron |
MOSFET |
|
| 7 | SMS004N8EJ7 |
Silikron |
MOSFET |
|
| 8 | SMS010N02D1 |
Silikron |
MOSFET |
|
| 9 | SMS010N03D1 |
Silikron |
MOSFET |
|
| 10 | SMS010N04A1 |
Silikron |
MOSFET |
|
Desde 2024. D4U Semiconductor.
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