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| Part Number | Si4410DY |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI4410DY |
| Manufacturer | NXP |
| Title | N-channel FET |
| Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithi. |
| Features | s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top vi. |
| Part Number | SI4410DY |
| Manufacturer | Vishay |
| Title | N-Channel MOSFET |
| Description | N-Channel 30-V (D-S) MOSFET Si4410DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0135 @ VGS = 10 V 30 0.020 @ VGS = 4.5 V ID (A) 10 8 FEATURES D TrenchFETr Power MOSFET D SO-8 S1 S2 S3 G4 8D 7D 6D 5D G Top View Ordering Information: Si4410DY-REVA Si4410DY-T1-REVA (with Tape. |
| Features | D TrenchFETr Power MOSFET D SO-8 S1 S2 S3 G4 8D 7D 6D 5D G Top View Ordering Information: Si4410DY-REVA Si4410DY-T1-REVA (with Tape and Reel) Si4410DY-REVA-E3 (Lead free) Si4410DY-T1-A-E3 (Lead free with Tape and Reel) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current. |
| Part Number | SI4410DY |
| Manufacturer | Fairchild Semiconductor |
| Title | Single N-Channel MOSFET |
| Description | This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications wh. |
| Features | 10 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. ' ' ' ' 62 6 6* 6 $EVROXWH 0D[LPXP 5DWLQJV $U Ã2Ã!$8ÃyrÃur vrÃrq 6PERO 3DUDPHWHU W'66 W*66 D' Q' 9 hvT prÃWyhtr BhrT prÃWyhtr 9 hvÃ8 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | Si4410DYPbF |
International Rectifier |
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| 2 | SI4410BDY |
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| 3 | Si4411DY |
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| 4 | Si4412ADY |
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| 5 | Si4412DY |
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N-Channel Enhancement-Mode MOSFET |
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| 6 | SI4413DY |
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| 7 | SI4416DY |
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| 8 | Si4416DY |
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| 9 | Si4401DDY |
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| 10 | SI4401DY |
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Desde 2024. D4U Semiconductor.
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