Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | SFT1202 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SFT1202 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : ENA1169A SFT1202 Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA http://onsemi.com Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • Adoption of FBET, MBIT process • Low collector-to-emitter saturation voltage • H. |
| Features |
• Adoption of FBET, MBIT process • Low collector-to-emitter saturation voltage • High allowable power dissipation • Large current capacity • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Symbol V. |
| Part Number | SFT1202 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) ·Fast -Switching speed ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter ·Relay dirvers ·Lamp dirvers ·Motor dirver. |
| Features | S V(BR)EBO Emitter-Base Breakdown Voltage IE=10uA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=10uA ,IE=0 VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC= 1A; IB= 100mA IC= 0.5A; IB= 50mA IC= -1A; IB= 100mA VCB= 80V; IE= 0 IEBO Emitter Cutoff Current V. |
similar datasheet
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| 5 | SFT1 |
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| 6 | SFT10.7 |
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| 7 | SFT10.7MA5 |
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| 8 | SFT10.7MA5-Z |
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| 9 | SFT10.7MS2 |
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| 10 | SFT10.7MS2-Z |
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Desde 2024. D4U Semiconductor.
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