SDT9A5P02 Datasheet. existencias, precio

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SDT9A5P02 P-Channel Enhancement Mode Power MOSFET

SDT9A5P02

SDT9A5P02
SDT9A5P02 SDT9A5P02
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Part Number SDT9A5P02
Manufacturer SeCoS
Description The SDT9A5P02 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT9A5P02 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced high cell density Trench technology Super Low .
Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9A5P02 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3K Leader Size 7 inch DFN2x2-6J REF. A B C D E F G Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326 REF. H I J K L M Millimeter Min. Max. 0.20 - 0.85 1.05 0.70 0.90 0.20 0.40 0.203REF 0.00 0.05 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current @VGS= -4.5V 1 .
Datasheet Datasheet SDT9A5P02 Data Sheet
PDF 611.93KB
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