SDN2007-C |
Part Number | SDN2007-C |
Manufacturer | SeCoS |
Description | The SDN2007-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a Uni-directional or Bi-directional load switch, facilitated by its common-drain configuration. DFN2x3-6J MARKING 2007 Lot Code PACKAGE INFORMATION Package MPQ DFN2×3-6J 3K Leader Size 7 inch ORDER . |
Features | ower Dissipation TA=25°C PD Lead Temperature for Soldering Purposes @1/8’’ from case for 10s TL Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Thermal Resistance from Junction to Ambient RθJA Top View Equivalent Circuit Rating 20 ±12 8 45 1.5 260 150, -55~150 Unit V V A A W °C °C 83.3 °C / W http://www.SeCoSGmbH.com/ 19-Mar-2021 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SDN2007-C 8A, 20V, RDS(ON) 15mΩ Dual-N Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS. |
Datasheet |
SDN2007-C Data Sheet
PDF 609.15KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SDN2004S-C |
SeCoS |
Dual-N Channel Enhancement Mode Power MOSFET | |
2 | SDN0080G |
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