SCG2019 |
Part Number | SCG2019 |
Manufacturer | SeCoS |
Description | These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage APPLICATION DC-DC converter circuit Load Switch MARKING P9 . |
Features |
Gate – Source Voltage Continuous Drain Current 1 TA= 25°C TA= 70°C Power Dissipation 1 TA= 25°C TA= 70°C Continuous Drain Current 2 TA= 25°C TA= 70°C Power Dissipation 2 Pulsed Drain Current 3 TA= 25°C TA= 70°C Lead Temperature Operating Junction & Storage Temperature Range VDS VGS ID PD ID PD IDM TL TJ, TSTG Rating 10S Steady State -20 ±5 -0.73 -0.62 -0.58 -0.5 0.38 0.28 0.24 0.18 -0.61 -0.55 -0.49 -0.44 0.27 0.22 0.17 0.14 -1.2 260 150, -55~150 Unit V V A W A W A °C °C http://www.SeCoSGmbH.com/ 15-Jul-2014 Rev. B Any changes of specification will not b. |
Datasheet |
SCG2019 Data Sheet
PDF 696.10KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SCG2000 |
Connor-Winfield |
Synchronous Clock Generators | |
2 | SCG2000I |
Connor-Winfield |
Synchronous Clock Generators | |
3 | SCG2035-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
4 | SCG2540 |
Connor-Winfield |
Synchronous Clock Generators | |
5 | SCG002 |
WJ Communication |
InGaP HBT Gain Block | |
6 | SCG015 |
WJ Communication |
High Linearity InGaP HBT Amplifier | |
7 | SCG102A |
Connor-Winfield |
Synchronous Clock Generators | |
8 | SCG3019 |
SeCoS |
N-Channel MOSFET | |
9 | SCG3139K-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SCG4000 |
Connor-Winfield |
Synchronous Clock Generators |