Part Number | S9013 |
Distributor | Stock | Price | Buy |
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Part Number | S9013 |
Manufacturer | Fairchild Semiconductor |
Title | NPN Epitaxial Silicon Transistor |
Description | SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolu. |
Features | itter On Voltage Test Condition IC =100µA, IE =0 IC =1mA, IB =0 IE =100µA, IC =0 VCB =25V, IE =0 VEB =3V, IC =0 VCE =1V, IC =50mA VCE =1V, IC =500mA IC =500mA, IB =50mA IC =500mA, IB =50mA VCE =1V, IC =10mA 0.6 64 40 120 120 0.16 0.91 0.67 Min. 40 20 5 100 100 202 0.6 1.2 0.7 V V V Typ. Max. Units V V V nA nA hFE Classification Classification hFE1 D 64 ~ 91 E 78 ~ 112 F 96 ~ 135 G 112 ~ 166 H 144. |
Part Number | S9013 |
Manufacturer | AUK corp |
Title | NPN Silicon Transistor |
Description | • General purpose application. • Switching application. Features • Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking STS9013 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 . |
Features |
• Excellent hFE linearity. • Complementary pair with STS9012 Ordering Information Type NO. STS9013 Marking STS9013 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 2.25±0.1 unit : mm 4.5±0.1 0.4±0.02 2.06±0.1 14.0±0.40 1.27 Typ. 2.54 Typ. 1 2 3 1.20±0.1 PIN Connections 1. Emitter 2. Base 3. Collector 0.38 KST-9016-000 1 STS9013 Absolute maximum ratings Characteristic Collector. |
Part Number | S9013 |
Manufacturer | Weitron Technology |
Title | NPN Transistor |
Description | www.DataSheet4U.com S9013 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013=J3 0.1 100 100 25 40 E=20 Vdc, I E= 0 ) 40 5.0 O 0.1 0.1 0.1 u u u www.DataSheet4U.com WEITRON http://www.weitron.com.tw www.DataSheet4U.com S9013 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countin. |
Features | 0uA h EF , DC CURRENT GAIN I B =140uA V CE =1V 100 10 20 30 40 50 1 1 10 100 1000 10000 VCE , COLLECTOR-EMITTER VOLTAGE(VoLTS) Figure1. Static Characteristic IC ,COLLECTOR CURRENT(mA) Figure2. DC current Gain VBE (sat),VCE (sat), SATURATION VOLTAGE(mA) I C =10I B fT, CURRENT GAIN BANDWIDTH PRODUCT(MHZ) 1000 1000 V CE=6V 100 100 V BE =(sat) 10 10 V CE =(sat) 1 1 10 10. |
Part Number | S9013 |
Manufacturer | GME |
Title | NPN Transistor |
Description | NPN Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW). Pb Lead-free APPLICATIONS High Collector Current. ORDERING INFORMATION Type No. Marking S9013 J3 Production specifica. |
Features |
High Collector Current.(IC= 500mA). Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW). Pb Lead-free APPLICATIONS High Collector Current. ORDERING INFORMATION Type No. Marking S9013 J3 Production specification S9013 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Col. |
Part Number | S9013 |
Manufacturer | SeCoS |
Title | NPN Transistor |
Description | Elektronische Bauelemente S9013 NPN Silicon General Purpose Transistor FEATURES RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 33 Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction tempe. |
Features | RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 33 Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55OC ~ + 150OC V 1 2 A L 3 Top View 12 G 1 Base BS 2 Emitter C D HK J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 . |
Part Number | S9013 |
Manufacturer | MCC |
Title | NPN Silicon Transistors |
Description | MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and st. |
Features |
• TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: S9013 Pin Configuration C BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collecto. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | S9011 |
WEJ |
NPN Transistor | |
2 | S9011 |
BL |
NPN Silicon Epitaxial Planar Transistor | |
3 | S9011 |
GME |
NPN Transistor | |
4 | S9012 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor | |
5 | S9012 |
Weitron Technology |
PNP General Purpose Transistors | |
6 | S9012 |
BL |
PNP Silicon Transistor | |
7 | S9012 |
INCHANGE |
PNP Transistor | |
8 | S9012 |
SeCoS |
PNP Silicon Transistor | |
9 | S9012 |
TGS |
PNP Transistor | |
10 | S9012 |
JCST |
PNP TRANSISTOR |