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S29WS128P Burst Simultaneous Read/Write MirrorBit Flash Memory


S29WS128P
Part Number S29WS128P
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Cypress Semiconductor
S29WS128P
Part Number S29WS128P
Manufacturer Cypress Semiconductor
Title Simultaneous Read/Write Flash
Description S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.95 V)  90 nm MirrorBit™ Technology  Simultaneous Read/Write operation with zero latency  Random page read access mode of 8 words with 20 ns i.
Features  Single 1.8 V read/program/erase (1.70
  –1.95 V)  90 nm MirrorBit™ Technology  Simultaneous Read/Write operation with zero latency  Random page read access mode of 8 words with 20 ns intra page access time  32 Word / 64 Byte Write Buffer  Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively  Four 16 Kword sectors at both top and bottom of memory array  510/25.

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