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| Part Number | RFG70N06 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RFG70N06 |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in ap. |
| Features |
• 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits. |
| Part Number | RFG70N06 |
| Manufacturer | Harris |
| Title | N-Channel MOSFET |
| Description | The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in a. |
| Features |
• 70A, 60V • rDS(on) = 0.014Ω • Temperature Compensated PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve (Single Pulse) • +175oC Operating Temperature Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE Description The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses. |
| Part Number | RFG70N06 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current swi. |
| Features |
·With TO-247 packaging ·UIS rating curve ·Peak current vs pulse width curve ·High power and current handling capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High current switching applications INCHANGE Semiconductor RFG70N06 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage . |
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Desde 2024. D4U Semiconductor.
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