| Part Number | RF2L16080CF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | 80 W, 28 V, 1.3 to 1.7 GHz RF power LDMOS transistor |
| Description | The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats. DS13222 - Rev 2 - April 2021 For further information co... |
| Features |
Order code
Frequency
VDD
POUT
Gain Efficiency
RF2L16080CF2
1625 MHz
28 V
80 W
18 dB
57%
• High efficiency and linear gain operations • Integrated ESD protection • Internally input matched for ease of use • Large positive and negative gate-source voltage range for improved class C operation • Excellent thermal stability, low HCI drift • In compliance with the European Directive 2002/95/EC Applications • Satellite comms • Telecom • ISM Description The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications wit... |
| Document |
 RF2L16080CF2 datasheet pdf (1.87MB)
|
| Distributor |
STMicroelectronics All other distributors |
| Stock | 0 In Stock |
| Price | 160 units: 52.72 USD 480 units: 51.89 USD
|
| BuyNow |
 Buy Now (Manufacturer a STMicroelectronics RF2L16080CF2) |
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