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| Part Number | RD2.4E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RD2.4E |
| Manufacturer | EIC |
| Title | SILICON ZENER DIODES |
| Description | RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13g SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52. |
| Features | : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13g SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS Rating at 25 °C ambient temperature unl. |
| Part Number | RD2.4E |
| Manufacturer | NEC |
| Title | Zener Diode |
| Description | NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance under the specific. |
| Features | 1981 RD2.0E to RD200E ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) Zener Voltage VZ (V)Note 1 MIN. B RD2.0E B1 B2 B RD2.2E B1 B2 B RD2.4E B1 B2 B RD2.7E B1 B2 B RD3.0E B1 B2 B RD3.3E B1 B2 B RD3.6E B1 B2 B RD3.9E B1 B2 B RD4.3E B1 B2 B3 B RD4.7E B1 B2 B3 B RD5.1E B1 B2 B3 B RD5.6E B1 B2 B3 B RD6.2E B1 B2 B3 B RD6.8E B1 B2 B3 1.88 1.88 2.02 2.12 2.12 2.22 2.33 2.33 2.43 2.54 2.54 2.69 2.85 2.85 3.01 3. |
| Part Number | RD2.4E |
| Manufacturer | Excel Semiconductor |
| Title | Zener diode |
| Description | RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 15. |
| Features | 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRSM 100 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -65~+1. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RD2.4ES |
WEJ |
Zener diode |
|
| 2 | RD2.4ES |
EIC |
ZENER DIODES |
|
| 3 | RD2.4ES |
NEC |
Zener Diode |
|
| 4 | RD2.4F |
EIC |
ZENER DIODES |
|
| 5 | RD2.4F |
NEC |
ZENER DIODES |
|
| 6 | RD2.4FM |
SunMate |
SURFACE MOUNT SILICON ZENER DIODES |
|
| 7 | RD2.4FM |
Renesas |
ZENER DIODES |
|
| 8 | RD2.4M |
NEC |
ZENER DIODES |
|
| 9 | RD2.4MW |
NEC |
ZENER DIODES |
|
| 10 | RD2.4S |
Renesas |
ZENER DIODES |
|
Desde 2024. D4U Semiconductor.
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