Part Number | RB411D |
Distributor | Stock | Price | Buy |
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Part Number | RB411D |
Manufacturer | Rohm |
Title | Schottky barrier diode |
Description | Data Sheet Schottky Barrier Diode RB411D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0. 3~0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4 +-00..1. |
Features |
1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4 +-00..105 Each lead has same dimension (3) +0.1 0 .15 -0.06 0.95 2 1 1.6-+00.. 2.8±0. 2 (2) 0.95 0.95 1.9±0.2 0.8MIN. 0~ 0.1 SMD3 (1) 0 .8±0 .1 1. 1±0. 2 0. 01 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping specifications (Unit : mm) 4.0±0.1 2.0. |
Part Number | RB411D |
Manufacturer | Kexin |
Title | Schottky Barrier Diode |
Description | SMD Type Schottky Barrier Diode KB411D(RB411D) Diodes Features Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse. |
Features | Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage DC Reverse voltage Mean rectifying current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 40 20 0. |
Part Number | RB411D |
Manufacturer | Pan Jit International |
Title | Schottky Barrier Diode |
Description | RB411D Schottky Barrier Diode VOLTAGE 40Volts POWER FEATURES High Reliability Low Reverse Current Ultra High-speed Switching MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D 500mA ABSOLUTE RATINGS (TA=25 ) Par. |
Features | High Reliability Low Reverse Current Ultra High-speed Switching MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D 500mA ABSOLUTE RATINGS (TA=25 ) Parameter Reverse Voltage Average Rectified Forward Current Forward Current Surge Peak (t=8.3ms) Junction Temperature Storage Temperature Symbol VRM IO IFSM TJ TSTG Va. |
Part Number | RB411D |
Manufacturer | JCET |
Title | SCHOTTKY BARRIER DIODE |
Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB411D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Paramete. |
Features | z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Parameter Peak repetitive reverse voltage RMS reverse voltage DC reverse voltage Mean rectifying output current Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Sto. |
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