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RB411D 20 to 40 Volts 0.5 Amp Surface Mount Schottky Barrier Diode


RB411D
Part Number RB411D
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Rohm
RB411D
Part Number RB411D
Manufacturer Rohm
Title Schottky barrier diode
Description Data Sheet Schottky Barrier Diode RB411D Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 0. 3~0.6 1.0MIN. 2.4 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4 +-00..1.
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
Construction Silicon epitaxial planer 2.9±0.2 リードとも 0.4 +-00..105 Each lead has same dimension (3) +0.1 0 .15 -0.06 0.95 2 1 1.6-+00.. 2.8±0. 2 (2) 0.95 0.95 1.9±0.2 0.8MIN. 0~ 0.1 SMD3 (1) 0 .8±0 .1 1. 1±0. 2 0. 01 
 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping specifications (Unit : mm) 4.0±0.1 2.0.
Kexin
RB411D
Part Number RB411D
Manufacturer Kexin
Title Schottky Barrier Diode
Description SMD Type Schottky Barrier Diode KB411D(RB411D) Diodes Features Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse.
Features Small surface mounting type Low VF. (VF=0.43V Typ. at 0.5A) High reliability. Silicon epitaxial planar +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage DC Reverse voltage Mean rectifying current Forward current surge peak Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Rating 40 20 0.
Pan Jit International
RB411D
Part Number RB411D
Manufacturer Pan Jit International
Title Schottky Barrier Diode
Description RB411D Schottky Barrier Diode VOLTAGE 40Volts POWER FEATURES High Reliability Low Reverse Current Ultra High-speed Switching MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D 500mA ABSOLUTE RATINGS (TA=25 ) Par.
Features High Reliability Low Reverse Current Ultra High-speed Switching MECHANICAL DATA Case : SOT-23, Plastic Terminals : Solderable per MIL-STD-202G, Method 208 Approx. Weight : 0.08 gram Marking : 11D 500mA ABSOLUTE RATINGS (TA=25 ) Parameter Reverse Voltage Average Rectified Forward Current Forward Current Surge Peak (t=8.3ms) Junction Temperature Storage Temperature Symbol VRM IO IFSM TJ TSTG Va.
JCET
RB411D
Part Number RB411D
Manufacturer JCET
Title SCHOTTKY BARRIER DIODE
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes RB411D SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Paramete.
Features z Small Surface Mounting Type z Low Reverse Current and Low Forward Voltage z High Reliability Marking: D3E Maximum Ratings(Ta=25℃ unless otherwise noted) Parameter Peak repetitive reverse voltage RMS reverse voltage DC reverse voltage Mean rectifying output current Non-repetitive Peak Forward Surge Current@t=8.3ms Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Sto.

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