Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | PZTA64 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PZTA64 |
| Manufacturer | Siemens Semiconductor Group |
| Title | PNP Silicon Darlington Transistors |
| Description | PNP Silicon Darlington Transistors PZTA 63 PZTA 64 For general AF applications q High collector current q High current gain q Complementary types: PZTA 13, PZTA 14 (NPN) q Type PZTA 63 PZTA 64 Marking PZTA 63 PZTA 64 Ordering Code (tape and reel) Q62702-Z2031 Q62702-Z2032 Pin Configuration 1 2. |
| Features | ics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 100 µA Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCE = 30 V, IE = 0 VCE = 30 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain IC = 10 mA, VCE =. |
| Part Number | PZTA64 |
| Manufacturer | NXP |
| Title | PNP Darlington transistor |
| Description | PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. handbook, halfpage PZTA64 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 1 2, 4 TR1 TR2 3 1 Top view 2 3 MAM320 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCES IC . |
| Features |
• High current (max. 500 mA) • Low voltage (max. 30 V). APPLICATIONS • Preamplifiers requiring high input impedance. DESCRIPTION PNP Darlington transistor in a SOT223 plastic package. NPN complement: PZTA14. handbook, halfpage PZTA64 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 1 2, 4 TR1 TR2 3 1 Top view 2 3 MAM320 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERE. |
| Part Number | PZTA64 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Darlington Transistor |
| Description | MPSA64 / MMBTA64 / PZTA64 Discrete POWER & Signal Technologies MPSA64 MMBTA64 C PZTA64 C E C B E C B TO-92 E SOT-23 Mark: 2V B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. . |
| Features | rwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA64 625 5.0 83.3 200 Max *MMBTA64 350 2.8 357 **PZTA64 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ©. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PZTA63 |
Siemens Semiconductor Group |
PNP Silicon Darlington Transistors |
|
| 2 | PZTA63 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 3 | PZTA64T1 |
Motorola |
PNP Transistor |
|
| 4 | PZTA65 |
Fairchild Semiconductor |
PNP Darlington Transistor |
|
| 5 | PZTA06 |
UTC |
AMPLIFIER TRANSISTOR |
|
| 6 | PZTA06 |
NXP |
NPN transistor |
|
| 7 | PZTA06 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 8 | PZTA13 |
Siemens Semiconductor Group |
NPN Silicon Darlington Transistors |
|
| 9 | PZTA13 |
Fairchild Semiconductor |
NPN Darlington Transistor |
|
| 10 | PZTA13 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors |
|
Desde 2024. D4U Semiconductor.
|