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| Part Number | PZTA42 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PZTA42 |
| Manufacturer | Kexin |
| Title | NPN Transistors |
| Description | SMD Type Transistors NPN Transistors PZTA42 (KZTA42) SOT-223 6.50±0.2 3.00±0.1 10 Unit:mm ■ Features ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to PZTA92 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Volta. |
| Features |
● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary to PZTA92 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg 4 7.0±0.. |
| Part Number | PZTA42 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN High Voltage Amplifier |
| Description | MPSA42 / MMBTA42 / PZTA42 — NPN High-Voltage Amplifier October 2014 MPSA42 / MMBTA42 / PZTA42 NPN High-Voltage Amplifier Features • This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 . |
| Features |
• This device is designed for application as a video output and other high-voltage applications. • Sourced from process 48. MPSA42 MMBTA42 C PZTA42 C EBC TO-92 E B SOT-23 Mark: 1D E C B SOT-223 Ordering Information Part Number MPSA42 MMBTA42 PZTA42 Top Mark MPSA42 1D A42 Package TO-92 3L SOT-23 3L SOT-223 4L Packing Method Bulk Tape and Reel Tape and Reel Absolute Maximum Ratings(1). |
| Part Number | PZTA42 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon High Voltage Transistor |
| Description | NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: PZTA92 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 PZTA42 43 2 1 Type PZTA42 Marking Pin Configuration PZTA42 1=B 2=C 3=E 4=C - - Package . |
| Features | = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 VCB = 200 V, IE = 0 , TA = 150 °C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Bas. |
| Part Number | PZTA42 |
| Manufacturer | WEITRON |
| Title | NPN Silicon Planar Epitaxial Transistor |
| Description | NPN Silicon Planar Epitaxial Transistor BASE 1 COLLECTOR 2, 4 3 EMITTER PZTA42 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 SOT-223 4 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspati. |
| Features | CE = 10V,IC = 30mA) Collector-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) Base-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (VCE = 20V, IC = 10mA, f = 100MHz) Output Capacitance (VCB = 20 Vdc, f = 1MHz) hFE1 25 hFE2 40 hFE3 40 - - - VCE(sat) - - 500 mV VBE(sat) - - 900 mV fT 50 - - MHz Cob - - 3 pF hFE, DC CURRENT GAIN . |
| Part Number | PZTA42 |
| Manufacturer | NXP |
| Title | NPN high-voltage transistor |
| Description | NPN high-voltage transistor in a SOT223 plastic package. PNP complement: PZTA92. 1 PZTA42 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION handbook, halfpage 4 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maxi. |
| Features |
• Low current (max. 100 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT223 plastic package. PNP complement: PZTA92. 1 PZTA42 PINNING PIN 1 2,4 3 base collector emitter DESCRIPTION handbook, halfpage 4 2, 4 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES . |
| Part Number | PZTA42 |
| Manufacturer | UTC |
| Title | HIGH VOLTAGE TRANSISTOR |
| Description | The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-emitter voltage: VCEO=300V (UTC PZTA42) VCEO=200V (UTC PZTA43) * High current gain * Complement to UTC PZTA92/93 * Collector power dissipation: PC(MAX)=1W 1 SOT-223 ORDER. |
| Features | * Collector-emitter voltage: VCEO=300V (UTC PZTA42) VCEO=200V (UTC PZTA43) * High current gain * Complement to UTC PZTA92/93 * Collector power dissipation: PC(MAX)=1W 1 SOT-223 ORDERING INFORMATION Ordering Number Lead Free Halogen Free PZTA42L-AA3-R PZTA42G-AA3-R PZTA43L-AA3-R PZTA43G-AA3-R Package SOT-223 SOT-223 Pin Assignment 123 BCE BCE Packing Tape Reel Tape Reel www.unisonic.. |
| Part Number | PZTA42 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | The PZTA42 is designed for application as a video output to drive color CRT, or as dialer circuit in electronics telephone. PZTA42 NPN Transistor Epitaxial Planar Transistor SOT-223 A4 2 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO Collector-Emitte. |
| Features | tage DC Current Gain Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 Min 300 300 6 - 25 40 40 Gain-Bandwidth Product Output Capacitance fT 50 Cob - unless otherwise specified Typ. - Max - 100 100 Unit V V V nA nA Test Conditions IC= 100 µA IC=1mA IE=10 µA VCB=300V VEB=6V - 500 mV IC=20 mA,IB=2mA - 900 mV IC=20 mA,IB=2mA -- VCE= 10 V, IC=1mA -- VCE= 10 V, IC=10mA . |
| Part Number | PZTA42 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Description | SYMBOL VALUE Collector Base Voltage VCBO 300 Collector Emitter Voltage VCEO 300 Emitter Base Voltage VEBO 6.0 Collector Current (DC) IC 100 Collector Current Peak ICM 200 Base Current Peak IBM 100 Power Dissipation upto Tamb=25ºC *PD 1.2 Storage Temperature Tstg - 65 to +150 J. |
| Features | ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS Collector Cut Off Current Emitter Cut Off Current ICBO IEBO VCB=200V, IE=0 VEB=6V, IC=0 20 nA 100 nA DC Current Gain hFE IC=1mA, VCE=10V 25 IC=10mA, VCE=10V IC=30mA, VCE=10V 40 40 Collector Emitter Saturation Voltage VCE (sat) IC=20mA, IB=2mA 0.5 V Base Emitter Saturation Voltage VBE (sat) IC=20. |
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