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| Part Number | PZT4403 |
| Distributor | Stock | Price | Buy |
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| Part Number | PZT4403 |
| Manufacturer | nexperia |
| Title | 600mA PNP switching transistor |
| Description | PNP switching transistor in a medium power SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PZT4401. 1.2 Features and benefits High current (max. 600 mA) Low voltage (max. 40 V) 1.3 Applications Switching and linear amplification 1.4 Quick reference data T. |
| Features | and benefits High current (max. 600 mA) Low voltage (max. 40 V) 1.3 Applications Switching and linear amplification 1.4 Quick reference data Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions open base VCE = −1 V; IC = −150 mA 2. Pinning information Min [1] 100 - Ma. |
| Part Number | PZT4403 |
| Manufacturer | SeCoS |
| Title | Epitaxial Planar Transistor |
| Description | RoHS Compliant Product The PZT4403 is designed for general purpose switching and amplifier applications. PZT4403 PNP Transistor Epitaxial Planar Transistor SOT-223 Features *High Power Dissipation: 1500mW at 25 oC *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4401 4403 ABSOLUTE . |
| Features | *High Power Dissipation: 1500mW at 25 oC *High DC Current Gain: 100~300 at 150mA *Complementary to PZT4401 4403 ABSOLUTE MAXIMUM RATINGS Ta=25oC Symbol Parameter VCBO Collector-Base Voltage VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continous) PD Total Power Dissipation TJ,Tstg Junction and Storage Temperature REF. A C D E I H Millimeter Min. Max. 6. |
| Part Number | PZT4403 |
| Manufacturer | WEJ |
| Title | PNP Transistor |
| Description | RoHS PZT4403 PZT4403 TRANSISTOR (PNP) SOT-223 FEATURES DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHAR. |
| Features | DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -40 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collector-base breakdown voltage NCollector-emitter breakdown voltage Emitter-base breakdown vo. |
| Part Number | PZT4403 |
| Manufacturer | Kexin |
| Title | PNP Transistors |
| Description | SMD Type Transistors PNP Transistors PZT4403 (KZT4403) ■ Features ● Low Voltage and Low Current ● General Purpose Amplifier and Switch Application ● Complementary to PZT4401 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 . |
| Features |
● Low Voltage and Low Current ● General Purpose Amplifier and Switch Application ● Complementary to PZT4401 SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 1.80 (max) 0.02 ~ 0.1 123 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter -. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PZT4401 |
NXP |
NPN switching transistor |
|
| 2 | PZT4401 |
SeCoS |
Epitaxial Planar Transistor |
|
| 3 | PZT4401 |
WEJ |
NPN Transistor |
|
| 4 | PZT4401 |
Kexin |
NPN Transistors |
|
| 5 | PZT4033 |
UTC |
PNP SILICON TRANSISTOR |
|
| 6 | PZT158 |
SeCoS |
Silicon Planar High Current Transistor |
|
| 7 | PZT159 |
Weitron Technology |
PNP Silicon Planar High Current Transistor |
|
| 8 | PZT159 |
SeCoS |
High Current Transistor |
|
| 9 | PZT1816 |
UTC |
NPN PLANAR TRANSISTOR |
|
| 10 | PZT194 |
SeCoS |
Silicon Planar Medium Power Transistor |
|
Desde 2024. D4U Semiconductor.
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