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| Part Number | PZT3904 |
| Distributor | Stock | Price | Buy |
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| Part Number | PZT3904 |
| Manufacturer | NXP |
| Title | NPN switching transistor |
| Description | NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. handbook, halfpage PZT3904 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximu. |
| Features |
• Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed saturated switching. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT3906. handbook, halfpage PZT3904 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the A. |
| Part Number | PZT3904 |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL NPN TRANSISTOR |
| Description | ® PZT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type PZT3904 s Marking 3904 s s s SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS PZT3906 2 1 SOT-223 2 3 APPLICATIONS WELL SUITABLE FOR. |
| Features | ol I CEX I BEX Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Test Conditions V CE = 30 V V CE = 30 V I C = 1 mA 40 Min. Typ. Max. 50 50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturatio. |
| Part Number | PZT3904 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Switching Transistor |
| Description | PZT3904 NPN Silicon Switching Transistor High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: PZT3906 (PNP) 4 3 2 1 VPS05163 Type PZT3904 Maximum Ratings Parameter Marking ZT 3904 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Symbol VCEO V. |
| Features | ctor cutoff current VCB = 30 V, IE = 0 ICBO ICEV IBEV hFE V(BR)EBO V(BR)CBO V(BR)CEO typ. max. Unit 40 60 6 - - 50 50 50 V nA Collector-emitter cutoff current VCE = 30 V, -VBE = 0.5 V Base-emitter cutoff current VCE = 30 V, -VBE = 0.5 DC current gain 1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturatio. |
| Part Number | PZT3904 |
| Manufacturer | SeCoS |
| Title | General Purpose Transistor |
| Description | Elektronische Bauelemente RoHS Compliant Product PZT3904 NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.2 A Collector-base voltage V (BR)CBO : 6 0 V Operating and storage junction temperature range T JˈTstg: -55ć to +. |
| Features | Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.2 A Collector-base voltage V (BR)CBO : 6 0 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć ELECTRICAL CHARACTERISTICS (Tamb=25Я E unless SOT-223 1. BASE 2. COLLECTOR 3. EMITTER f f f 5 5 efe efe efe f f . |
| Part Number | PZT3904 |
| Manufacturer | WEJ |
| Title | NPN Transistor |
| Description | RoHS PZT3904 PZT3904 TRANSISTOR (NPN) SOT-223 FEATURES Power dissipation DPCM: 1 Collector current W (Tamb=25℃) TICM: 0.2 A Collector-base voltage 1. BASE 2. COLLECTOR 3. EMITTER .,LV(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ OELECTRICAL CHARACT. |
| Features | Power dissipation DPCM: 1 Collector current W (Tamb=25℃) TICM: 0.2 A Collector-base voltage 1. BASE 2. COLLECTOR 3. EMITTER .,LV(BR)CBO: 60 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ OELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP CCollector-base breakdown voltage Collector-emitter breakdown v. |
| Part Number | PZT3904 |
| Manufacturer | GOOD-ARK |
| Title | NPN Transistor |
| Description | Features ■ Low voltage and low current ■ Complementary to PZT3906 ■ General purpose amplifier and switch application PZT3904 NPN Transistor Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren. |
| Features |
■ Low voltage and low current ■ Complementary to PZT3906 ■ General purpose amplifier and switch application PZT3904 NPN Transistor Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temper. |
| Part Number | PZT3904 |
| Manufacturer | Siemens Semiconductor Group |
| Title | NPN Silicon Switching Transistor |
| Description | NPN Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3906 (PNP) q PZT 3904 Type PZT 3904 Marking ZT 3904 Ordering Code (tape and reel) Q62702-Z2029 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximu. |
| Features |
C = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, – VBE = 0.5 V Base-emitter cutoff current VCE = 30 V, – VBE = 0.5 V DC current gain1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, . |
| Part Number | PZT3904 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 EBC TO-92 MMBT3904 C SOT-23 Mark:1A E B PZT3904 C SOT-223 E C B Ordering Information Part Number 2N3904BU 2N3904TA 2N3904TAR 2N3. |
| Features | . |
| Part Number | PZT3904 |
| Manufacturer | National Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 N 2N3904 C C B Discrete Power & Signal Technologies MMBT3904 E TO-92 E SOT-23 Mark: 1A B MMPQ3904 B E B E B E B PZT3904 C C E www.DataSheet4U.com SOIC-16 C C C C C C C E C B SOT-223 NPN General Purpose Amplifier This device is designed as . |
| Features | tory should be consulted on applications involving pulsed or low duty cycle operations. 2N3904 / MMBT3904 / MMPQ3904 / PZT3904 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdow. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PZT3904T1G |
ON Semiconductor |
General Purpose Transistor |
|
| 2 | PZT3906 |
GOOD-ARK |
PNP Transistor |
|
| 3 | PZT3906 |
NXP |
PNP switching transistor |
|
| 4 | PZT3906 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTOR |
|
| 5 | PZT3906 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistor |
|
| 6 | PZT3906 |
Fairchild Semiconductor |
PNP Amplifier |
|
| 7 | PZT3906 |
ON Semiconductor |
PNP General-Purpose Amplifier |
|
| 8 | PZT3906 |
SeCoS |
Epitaxial Planar Transistor |
|
| 9 | PZT3906 |
WEJ |
PNP Transistor |
|
| 10 | PZT3906 |
Kexin |
PNP Transistors |
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Desde 2024. D4U Semiconductor.
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