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| Part Number | PZT2907A |
| Distributor | Stock | Price | Buy |
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| Part Number | PZT2907A |
| Manufacturer | NXP |
| Title | PNP switching transistor |
| Description | PNP switching transistor in a SOT223 plastic package. NPN complement: PZT2222A. PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION handbook, halfpage 4 2, 4 1 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maxi. |
| Features |
• High current (max. 600 mA) • Low voltage (max. 60 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT223 plastic package. NPN complement: PZT2222A. PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION handbook, halfpage 4 2, 4 1 3 1 2 3 Top view MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance wit. |
| Part Number | PZT2907A |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP General Purpose Amplifier |
| Description | PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discrete POWER & Signal Technologies PN2907A MMBT2907A C PZT2907A C E C B E C B TO-92 E SOT-23 Mark: 2F B SOT-223 MMPQ2907 E B E B E B NMT2907 C2 E1 C1 C B2 E2 E B SOIC-16 C C C C C C C SOT-6 Mark: .2B B1 PNP General Purpos. |
| Features | ory should be consulted on applications involving pulsed or low duty cycle operations. ã 1997 Fairchild Semiconductor Corporation PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO. |
| Part Number | PZT2907A |
| Manufacturer | Motorola Inc |
| Title | SOT-223 PACKAGE PNP SILICON TRANSISTOR |
| Description | . |
| Features | . |
| Part Number | PZT2907A |
| Manufacturer | ON Semiconductor |
| Title | 60V PNP General-Purpose Transistor |
| Description | • High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-. |
| Features |
Description
• High DC Current Gain (hFE) Range: 100 ~ 300 • High-Current Gain Bandwidth Product (fT): 200 MHz (Minimum) The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalpurpose amplifier or switch in applications that require up to 500 mA. Offered in an ultra-small surface-mount • Maximum Turn-On Time (ton): 45 ns package (SOT-223), the PZT290. |
| Part Number | PZT2907A |
| Manufacturer | WEITRON |
| Title | PNP Silicon Planar Epitaxial Transistor |
| Description | PZT2907A PNP Silicon Planar Epitaxial Transistor P b Lead(Pb)-Free ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature BASE 1 Symbol VCEO VCB. |
| Features | ICEX - -50 nAdc IEBO - 100 nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw 1/4 Rev.A 26-Aug-05 PZT2907A ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless otherwise noted) C harac teris tic S ymbol Min TY P Max Unit ON CHARACTERISTICS DC Cur. |
| Part Number | PZT2907A |
| Manufacturer | Diotec |
| Title | Suface Mount Si-Epitaxial Planar Switching Transistors |
| Description | PZT2907 / PZT2907A PZT2907 / PZT2907A PNP Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.5±0.2 3±0.1 4 1.65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.7 2.3 23 . |
| Features |
)
PZT2907
PZT2907A
40 V
60 V
60 V
60 V
5V
1.3 W 1)
600 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
Collector-cutoff current – Kollektor-Reststrom IE = 0, - VCB = 50 V PZT2907 PZT2907A IE = 0, - VCB = 50 V, Tj = 150°C PZT2907 PZT2907A Emitter-cutoff current – Emitter-Reststrom IC = 0, - VEB = 3 V Collector saturation voltage – Kollektor-Sättigungsspannung 2) - IC = 150. |
| Part Number | PZT2907A |
| Manufacturer | SeCoS |
| Title | Silicon Planar Medium Power Transistor |
| Description | The PZT2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. SOT-223 MARKING Collector 2907A = Date code Base BCE Emitter REF. A B C D E F I O MAXIMUM RATINGS (TA=25 °C, unless otherwise specified) Parameter Symbol Value . |
| Features | ctor - Base Breakdown Voltage Collector - Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut - Off Current Collector - Emitter Saturation Voltage Base - Emitter Voltage DC Current Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX VCE(sat)1 VCE(sat)2 VBE(sat) VBE(sat) hFE1 hFE2 hFE3 hFE4 hFE5 Min. -60 -60 -5 75 100 100 100 50 Typ. - - -0.2 -0.5 180 . |
| Part Number | PZT2907A |
| Manufacturer | WEJ |
| Title | PNP Transistor |
| Description | RoHS PZT2907A PZT2907A TRANSISTOR (PNP) SOT-223 FEATURES DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CH. |
| Features | DPower dissipation TPCM: 1 W (Tamb=25℃) Collector current .,LICM: -0.6 A Collector-base voltage V(BR)CBO: -60 V OOperating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter Collector-base breakdown voltage NCollector-emitter breakdown voltage Emitter-base breakdown vo. |
| Part Number | PZT2907A |
| Manufacturer | Kexin |
| Title | PNP Transistors |
| Description | SMD Type Transistors PNP Transistors PZT2907A (KZT2907A) ■ Features ● Epitaxial planar die construction ● Complementary to PZT2222A SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Em. |
| Features |
● Epitaxial planar die construction ● Complementary to PZT2222A SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PZT2907 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors |
|
| 2 | PZT2907 |
Diotec |
Suface Mount Si-Epitaxial Planar Switching Transistors |
|
| 3 | PZT2907A-C |
SeCoS |
Silicon Planar Medium Power Transistor |
|
| 4 | PZT2907AT1 |
Motorola |
PNP Silicon Epitaxial Transistor |
|
| 5 | PZT2222 |
Siemens Semiconductor Group |
NPN Silicon Switching Transistors |
|
| 6 | PZT2222 |
Diotec |
Suface Mount Si-Epitaxial Planar Switching Transistors |
|
| 7 | PZT2222A |
NXP |
NPN switching transistor |
|
| 8 | PZT2222A |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 9 | PZT2222A |
TAITRON |
SMD General Purpose Transistor |
|
| 10 | PZT2222A |
UTC |
NPN GENERAL PURPOSE AMPLIFIER |
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Desde 2024. D4U Semiconductor.
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