PSMN2R0-30YL Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

PSMN2R0-30YL N-channel FET

PSMN2R0-30YL

PSMN2R0-30YL
PSMN2R0-30YL PSMN2R0-30YL
zoom Click to view a larger image
Part Number PSMN2R0-30YL
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applicati.
Features „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 30 100 97 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see .
Datasheet Datasheet PSMN2R0-30YL Data Sheet
PDF 240.62KB
Distributor Stock Price Buy

PSMN2R0-30YL

nexperia
PSMN2R0-30YL
Part Number PSMN2R0-30YL
Manufacturer nexperia
Title N-channel MOSFET
Description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses .
Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS Parameter drain-source voltage Conditions Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 1.


similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 PSMN2R0-30YLD
nexperia
N-channel MOSFET Datasheet
2 PSMN2R0-30YLD
NXP
N-channel MOSFET Datasheet
3 PSMN2R0-30YLE
nexperia
N-channel MOSFET Datasheet
4 PSMN2R0-30YLE
NXP Semiconductors
MOSFET Datasheet
5 PSMN2R0-30BL
NXP Semiconductors
MOSFET Datasheet
6 PSMN2R0-30BL
nexperia
N-channel MOSFET Datasheet
7 PSMN2R0-30PL
NXP Semiconductors
N-channel MOSFET Datasheet
8 PSMN2R0-30PL
nexperia
N-channel MOSFET Datasheet
9 PSMN2R0-100SSF
nexperia
N-channel MOSFET Datasheet
10 PSMN2R0-25MLD
nexperia
N-channel MOSFET Datasheet
More datasheet from NXP Semiconductors
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad