PSMN047-100NSE |
Part Number | PSMN047-100NSE |
Manufacturer | nexperia (https://www.nexperia.com/) |
Description | New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90 W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and power density requirements. These ASFETs combine enhanced SOA in a compact 2 mm x 2 . |
Features |
• Enhanced safe operating area (SOA) for superior linear mode operation • Low RDSon for low I2R conduction losses • 2 mm x 2 mm space-saving DFN2020 package, 60% smaller than LFPAK33 • Very low IDSS leakage 3. Applications • High power PoE applications (60 W and higher) • IEEE802.3at and proprietary PoE solutions • Fault tolerant load switch - Inrush management and eFuse applications • Battery management applications • Relay replacement • WIFI hotspots • 5G picocells • CCTV 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current . |
Datasheet |
PSMN047-100NSE Data Sheet
PDF 312.53KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PSMN040-100MSE |
NXP |
MOSFET | |
2 | PSMN040-100MSE |
nexperia |
N-channel MOSFET | |
3 | PSMN040-200W |
Philips |
N-channel TrenchMOS transistor | |
4 | PSMN041-80YL |
NXP |
MOSFET | |
5 | PSMN041-80YL |
nexperia |
N-channel MOSFET | |
6 | PSMN045-80YS |
NXP Semiconductors |
MOSFET | |
7 | PSMN045-80YS |
nexperia |
N-channel MOSFET | |
8 | PSMN002-25B |
NXP Semiconductors |
N-Channel MOSFET | |
9 | PSMN002-25P |
NXP Semiconductors |
N-Channel MOSFET | |
10 | PSMN003-25W |
Philips |
N-channel logic level TrenchMOS transistor |