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| Part Number | PHP30NQ15T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PHP30NQ15T |
| Manufacturer | nexperia |
| Title | N-channel MOSFET |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to l. |
| Features | and benefits Low conduction losses due to low on-state resistance Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; . |
| Part Number | PHP30NQ15T |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor PHP30NQ15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 63mΩ ·Low thermal resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switch. |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 63mΩ ·Low thermal resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage . |
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