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| Part Number | PHP28NQ15T |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PHP28NQ15T |
| Manufacturer | NXP |
| Title | N-Channel FET |
| Description | Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Low body diode Qr s Fast switching 1.3 Applications s DC-to-DC converters s DC-to-AC inverters s Switched-mode power supplies s Class-D audio 1.4 Quick reference. |
| Features | s Low body diode Qr s Fast switching 1.3 Applications s DC-to-DC converters s DC-to-AC inverters s Switched-mode power supplies s Class-D audio 1.4 Quick reference data s VDS ≤ 150 V s RDSon ≤ 65 mΩ s ID ≤ 28.5 A s QGD = 7.5 nC (typ) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain mbb076 Simplified outline mb Symb. |
| Part Number | PHP28NQ15T |
| Manufacturer | Inchange Semiconductor |
| Title | N-Channel MOSFET Transistor |
| Description | ·Drain Current ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMET. |
| Features | 250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=25A ;VGS= 0 RDS(on) Drain-Source On-Resistance VGS= 10V; ID=18A IGSS Gate-Body Leakage Current VGS= ±10V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 120V; VGS= 0 PHP18NQ11T MIN TYPE MAX UNIT 150 V 2.0 4.0 V 1.2 V 0.065 Ω ±100 nA 1 µA NOTICE： ISC reserves the rights to make change. |
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