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| Part Number | PE8200 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PE8200 |
| Manufacturer | semi one |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The PE8200 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications . General Features ● VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V. |
| Features |
● VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Application ● Uni-directional load switch ● Bi-directional load switch TSSOP-8 top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter S. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PE8203 |
semi one |
N-Channel Enhancement Mode Power MOSFET |
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| 2 | PE8203A |
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| 3 | PE8205 |
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| 4 | PE8205 |
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| 5 | PE8205A |
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| 6 | PE8205A |
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| 7 | PE8205L |
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| 8 | PE8207C |
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| 9 | PE8270M |
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| 10 | PE8050 |
Fairchild Semiconductor |
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers |
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Desde 2024. D4U Semiconductor.
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