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| Part Number | PBSS4230PANP |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PBSS4230PANP |
| Manufacturer | nexperia |
| Title | 2A NPN/PNP low VCEsat (BISS) transistor |
| Description | NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collector-emitter saturation voltage V. |
| Features |
and benefits
• Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • Load switch • Battery-driven devices • Power management • Charging circuits • Power switches (e.g. moto. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PBSS4230PAN |
NXP |
NPN/NPN low VCEsat (BISS) transistor |
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| 2 | PBSS4230PAN |
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| 4 | PBSS4230T |
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| 6 | PBSS4220V |
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| 9 | PBSS4240T |
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| 10 | PBSS4240V |
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Desde 2024. D4U Semiconductor.
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