NVMYS1D7N04C |
Part Number | NVMYS1D7N04C |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | MOSFET - Power, Single N-Channel 40 V, 1.7 mW, 190 A NVMYS1D7N04C Features • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless other. |
Features |
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • LFPAK4 Package, Industry Standard • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25°C ID State TC = 100°C 190 A 135 Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 25°C PD TC = 10. |
Datasheet |
NVMYS1D7N04C Data Sheet
PDF 192.47KB |
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